 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 60 -60 RDS(ON) 58m[ 90m[ ID 4.5A -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) 1 SYMBOL VDS VGS N-Channel P-Channel 60 20 4.5 4 -60 20 -3.5 -3 -20 2 1.3 UNITS V V TC = 25 C TC = 70 C ID IDM A 20 TC = 25 C TC = 70 C PD Tj, Tstg TL W -55 to 150 275 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA TYPICAL MAXIMUM 62.5 UNITS C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A VGS = 0V, ID = -250A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A VDS = VGS, ID = -250A Gate-Body Leakage IGSS VDS = 0V, VGS = 20V VDS = 0V, VGS = 20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 -60 1.0 -1.0 1.5 -1.5 2.5 -2.5 100 100 nA V MIN TYP MAX UNIT 1 Oct-01-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free VDS = 48V, VGS = 0V VDS = -48V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch 1 -1 10 -10 20 -20 55 100 42 70 14 9 85 135 58 90 S m[ A A VDS = 40V, VGS = 0V, TJ = 55 C N-Ch VDS = -40V, VGS = 0V, TJ = 55 C P-Ch On-State Drain Current 1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 4A VGS = -4.5V, ID = -3A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 4.5A VGS = -10V, ID = -3.5A Forward Transconductance1 gfs VDS = 10V, ID = 4.5A VDS = -5V, ID = -3.5A DYNAMIC Input Capacitance Ciss N-Ch N-Channel VGS = 0V, VDS = 25V, f = 1MHz Output Capacitance Coss P-Channel VGS = 0V, VDS = -30V, f = 1MHz Reverse Transfer Capacitance Crss N-Channel VDS = 0.5V (BR)DSS, VGS = 10V, ID = 4.5A Qgs P-Channel VDS = 0.5V (BR)DSS, VGS = -10V, Gate-Drain Charge2 Qgd ID = -3.5A N-Channel VDD = 30V Rise Time2 tr ID 1A, VGS = 10V, RGEN = 6[ P-Channel VDD = -30V Fall Time2 tf ID -1A, VGS = -10V, RGEN = 6[ P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 650 630 80 81 35 33 12 11 2.4 2.1 2.6 2.5 11 6 8 8 19 17 6 11 20 13 18 18 35 31 15 20 nS 16 15 nC pF Total Gate Charge2 Qg Gate-Source Charge2 Turn-On Delay Time2 td(on) Turn-Off Delay Time 2 td(off) 2 Oct-01-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = IS A, VGS = 0V IF = IS A, VGS = 0V Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 1.3 -1.3 2.6 -2.6 1 -1 V A Pulsed Current 3 ISM VSD Forward Voltage1 N-Ch P-Ch REMARK: THE PRODUCT MARKED WITH "P5806NVG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 Oct-01-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V 10 Is - Reverse Drain Current(A) T A = 125 C G S = 0V 1 0.1 25 C 0.01 -55 C 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 4 Oct-01-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free 5 Oct-01-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free P-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 -Is - Reverse Drain Current(A) 1 T A = 125 C 0.1 25 C -55 C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 6 Oct-01-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free 7 Oct-01-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5806NVG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Dimension Min. A B C D E F G 1.35 0.1 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 H I J K L M N 0 Dimension Min. 0.5 0.18 Typ. 0.715 0.254 0.22 4 8 Max. 0.83 0.25 mm J F D E G I H K B C A 8 Oct-01-2004 |
Price & Availability of P5806NVG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |